Polycrystalline silicon fragment, method for manufacturing polycrystalline silicon fragment, and polycrystalline silicon block fracture device

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United States of America Patent

PATENT NO 10307763
APP PUB NO 20170239666A1
SERIAL NO

15518637

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Abstract

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Polycrystalline silicon fragments obtained by fracturing polycrystalline silicon blocks wherein a content ratio of polycrystalline silicon powder having a particle size of 500 to 1000 μm is 0.1 to 40 ppmw.

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Patent Owner(s)

Patent OwnerAddress
TOKUYAMA CORPORATIONSHUNAN-SHI YAMAGUCHI 745-8648

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujii, Masami Yamaguchi, JP 6 40
Kawaguchi, Kazuhiro Yamaguchi, JP 12 22
Kondo, Manabu Yamaguchi, JP 47 270
Mito, Yoshifumi Yamaguchi, JP 3 4
Uchida, Sho Yamaguchi, JP 7 6
Yoshimatsu, Nobuaki Yamaguchi, JP 6 13

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