SEMICONDUCTOR DEVICE WITH SHAPED CAVITIES FOR EMBEDDING GERMANIUM MATERIAL AND DOUBLE TRENCH MANUFACTURING PROCESSES THEREOF
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May 15, 2017
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Feb 13, 2015
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Abstract
The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a shaped cavity formed from two trench structures, and the shaped cavity is filled with silicon and germanium material. A method for fabricating the semiconductor device may include forming a plurality of spacers, performing a first etching process to form a plurality of trenches, removing the plurality of spacers, performing a second etching process to form a shaped cavity, and filing the shaped cavity with silicon and germanium material.
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