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Abstract

A capacitor element sequentially including a dielectric layer containing an amorphous tungsten oxide, a layer coating a part or all of the dielectric layer and containing a crystalline tungsten oxide, a semiconductor layer and a conductor layer on a tungsten-containing anode body. The capacitor element is manufactured by a method including a sintering step of forming an anode body by sintering a formed body of a tungsten powder; a step of forming a dielectric layer by subjecting the anode body to a chemical conversion treatment; a step of forming a crystalline tungsten oxide layer on the dielectric layer; a step of forming a semiconductor layer for forming a semiconductor layer; and a step of forming a conductor layer for forming a conductor layer; in this order.

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First Claim