Systems and methodologies for vapor phase hydroxyl radical processing of substrates

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United States of America Patent

PATENT NO 10490399
APP PUB NO 20170263436A1
SERIAL NO

15452832

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Abstract

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An apparatus and method for processing substrates. The method includes positioning a substrate within a processing chamber of a substrate processing system. The substrate includes a layer of a carbon-containing material on a working surface of the substrate. The method also includes receiving hydrogen peroxide vapor in a vapor treatment region of the substrate processing system, generating hydroxyl radical vapor by treating the hydrogen peroxide vapor in the vapor treatment region, and directing the hydroxyl radical vapor and remaining hydrogen peroxide vapor to the working surface of the substrate causing the carbon-containing material to be chemically modified.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brown, Ian J Portland, US 32 320
Printz, Wallace P Austin, US 24 109

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