Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices
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United States of America Patent
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Mar 26, 2019
Grant Date -
Sep 14, 2017
app pub date -
Mar 24, 2017
filing date -
Mar 11, 2016
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Abstract
A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05.
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