METHOD FOR MANUFACTURING TWO-DIMENSIONAL MATERIAL STRUCTURE AND TWO-DIMENSIONAL MATERIAL DEVICE

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United States of America Patent

SERIAL NO

15261068

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A method for manufacturing a two-dimensional material structure and a resultant two-dimensional material device. The method comprises steps of: forming a sacrificial FIN structure on a substrate; covering the sacrificial FIN structure with a dielectric; releasing the sacrificial FIN structure; forming a carrier FIN structure at a position for releasing the sacrificial FIN; and self-restrictedly growing two-dimensional material structure by taking the carrier FIN structure as a substrate. Utilizing the sacrificial FIN structure to implement self-restrictedly growing of the nanometer structure of the two-dimensional material results in a high precision, lower edge roughness, high yields and low process deviation as well as compatibility with the processing of CMOS large scale integrated circuits, making the method suitable for a large scale production of the two-dimensional material and related devices.

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Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CAO, Heshi Beijing, CN 1 0
JIA, Kunpeng Beijing, CN 2 1
SU, Yajuan Beijing, CN 2 1
ZHAN, Jun Beijing, CN 12 40
ZHAO, Chao Kessel-lo, BE 100 372

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