Fin type field effect transistors with different pitches and substantially uniform fin reveal

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10020229
APP PUB NO 20170263503A1
SERIAL NO

15487685

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Abstract

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A semiconductor device that includes a first plurality of fin structures in a first device region and a second plurality of fin structures in a second device region. The first plurality of fin structures includes adjacent fin structures separated by a lesser pitch than the adjacent fin structures in the second plurality of fin structures. At least one layer of dielectric material between adjacent fin structures, wherein a portion of the first plurality of fin structures extending above the at least one layer of dielectric material in the first device region is substantially equal to the portion of the second plurality of fin structures extending above the at least one layer of dielectric material in the second device region. Source and drain regions are present on opposing sides of a gate structure that is present on the fin structures.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bi, Zhenxing Niskayuna, US 186 873
Cheng, Kangguo Schenectady, US 3073 29791
Devarajan, Thamarai S Albany, US 14 82
Pranatharthiharan, Balasubramanian Watervliet, US 225 1263

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