Fuse formed from III-V aspect ratio structure
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United States of America Patent
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Oct 10, 2017
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N/A
app pub date -
Mar 9, 2016
filing date -
Mar 9, 2016
priority date (Note) -
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Abstract
A fuse structure is provided above a first portion of a semiconductor material. The fuse structure includes a first end region containing a first portion of a metal structure having a first thickness, a second end region containing a second portion of the metal structure having the first thickness, and a neck region located between the first and second end regions. The neck region contains a third portion of the metal structure having a second thickness that is less than the first thickness, wherein a portion of the neck region is located in a gap positioned between a bottom III-V compound semiconductor material portion and a top III-V compound semiconductor material portion.
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