Contacts having a geometry to reduce resistance
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United States of America Patent
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Issued Date -
Sep 14, 2017
app pub date -
Mar 14, 2016
filing date -
Mar 14, 2016
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Abstract
A method of increasing the surface area of a contact to an electrical device that in one embodiment includes forming a contact stud extending through an intralevel dielectric layer to a component of the electrical device, and selectively forming a contact region on the contact stud. The selectively formed contact region has an exterior surface defined by a curvature and has a surface area that is greater than a surface area of the contact stud. An interlevel dieletric layer is formed on the intralevel dielectric layer, wherein an interlevel contact extends through the interlevel dielectric layer into direct contact with the selectively formed contact region.
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