SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America
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Sep 14, 2017
app pub date -
Sep 15, 2016
filing date -
Sep 15, 2016
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Abstract
According to one embodiment, a semiconductor device is disclosed. The device includes a substrate, and a first interconnect on the substrate. The first interconnect includes a first catalyst layer capable of growing graphene, a graphene layer in contact with a side surface of the first catalyst layer. The device further includes a non-catalyst layer in contact with a bottom surface of the graphene layer, and incapable of growing graphene.
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