Semiconductor device strain relaxation buffer layer

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United States of America Patent

PATENT NO 10615267
SERIAL NO

15474169

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Abstract

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A method for forming a semiconductor device comprises forming a first buffer layer with a first melting point on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer has a second melting point that is greater than the first melting point. Annealing process is performed that increases a temperature of the first buffer layer such that the first buffer layer partially liquefies and causes a strain in the second buffer layer to be substantially reduced.

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Patent Owner(s)

  • IBM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3065 29582
Miao, Xin Guilderland, US 355 2228
Xu, Wenyu Albany, US 190 905
Zhang, Chen Guilderland, US 669 2799

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