LDMOS transistors including resurf layers and stepped-gates, and associated systems and methods

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United States of America Patent

PATENT NO 10229993
APP PUB NO 20170263766A1
SERIAL NO

15456930

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Abstract

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A lateral double-diffused metal-oxide-semiconductor field effect (LDMOS) transistor includes a silicon semiconductor structure including (a) a base layer, (b) a p-type reduced surface field effect (RESURF) layer disposed over the base layer in a thickness direction, (c) a p-body disposed over the p-type RESURF layer in the thickness direction, (d) a source p+ region and a source n+ region each disposed in the p-body, (e) a high-voltage n-type laterally-diffused drain (HVNLDD) disposed adjacent to the p-body in a lateral direction orthogonal to the thickness direction, the HVNLDD contacting the p-type RESURF layer, and (f) a drain n+ region disposed in the HVNLDD. The LDMOS transistor further includes (a) a first dielectric layer disposed on the silicon semiconductor structure in the thickness direction over at least part of the p-body and the HVNLDD and (b) a first gate conductor disposed on the first dielectric layer in the thickness direction.

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Patent Owner(s)

  • MAXIN INTEGRATED PRODUCTS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fatemizadeh, Badredin Palo Alto, US 26 173
Xia, John Fremont, US 12 72
Zungia, Marco A Berkeley, US 1 3

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