Highly responsive III-V photodetectors using ZnO:Al as n-type emitter

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United States of America Patent

PATENT NO 10043920
APP PUB NO 20170263788A1
SERIAL NO

15604574

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Abstract

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A photodiode includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. An intrinsic layer is formed over the substrate and including a III-V material. A transparent II-VI n-type layer is formed on the intrinsic layer and functions as an emitter and an n-type ohmic contact.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jeehwan Los Angeles, US 246 1233
Li, Ning White Plains, US 710 4085
Sadana, Devendra K Pleasantville, US 897 9950
Wacaser, Brent A Putnam Valley, US 63 148

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