PHASE CHANGE MEMORY HAVING A COMPOSITE MEMORY ELEMENT
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United States of America Patent
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Mar 14, 2016
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Mar 14, 2016
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Abstract
A phase change memory device with a composite memory element includes first and second layers of memory materials, and the composite memory element has a basis phase change material, such as a chalcogenide, and one or more additives, where the first layer of memory material is formed using oxygen-free atmosphere and the second layer of memory material is formed using oxygen-containing atmosphere. The use of “oxygen-free” atmosphere can prevent oxidation at the electrode surface of the first electrode.
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