Gallium nitride transistor having a source/drain structure including a single-crystal portion abutting a 2D electron gas
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United States of America Patent
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Mar 26, 2019
Grant Date -
Sep 28, 2017
app pub date -
Oct 30, 2014
filing date -
Oct 30, 2014
priority date (Note) -
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Abstract
The present description relates to a gallium nitride transistor which includes at least one source/drain structure having low contact resistance between a 2D electron gas of the gallium nitride transistor and the source/drain structure. The low contact resistance may be a result of at least a portion of the source/drain structure being a single-crystal structure abutting the 2D electron gas. In one embodiment, the single-crystal structure is grown with a portion of a charge inducing layer of the gallium nitride transistor acting as a nucleation site.
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