SEMICONDUCTOR DEVICE
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United States of America Patent
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N/A
Issued Date -
N/A
app pub date -
Jun 14, 2017
filing date -
Aug 6, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present invention is provided to easily manufacture an IPD as any of a high-side switch and a low-side switch. A level shifting circuit is coupled to an input terminal, a first terminal, and a grounding terminal. Drive power of the level shifting circuit is supplied from the first terminal. An output signal of the level shifting circuit is input to a driver circuit. The driver circuit is coupled to the first terminal and a second terminal. Drive power of the driver circuit is supplied from the first terminal. A transistor has a gate electrode coupled to the driver circuit, a source coupled to the second terminal, and a drain coupled to a third terminal.
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