Substrate processing apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11104995
APP PUB NO 20170283949A1
SERIAL NO

15457686

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Abstract

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Disclosed is a substrate processing apparatus capable of improving the characteristic of a film formed on the surface of a wafer, using a single-wafer type substrate processing apparatus which heats and processes a wafer. The substrate processing apparatus may include: a processing vessel where a substrate is processed; a substrate supporter including: a first heater configured to heat the substrate to a first temperature; and a substrate placing surface where the substrate is placed; a heated gas supply system including a second heater configured to heat an inert gas, wherein the heated gas supply system is configured to supply a heated inert gas into the processing vessel; and a controller configured to control the first heater and the second heater such that a temperature of a front surface of the substrate and a temperature of a back surface of the substrate are in a predetermined range.

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Patent Owner(s)

  • KOKUSAI ELECTRIC CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ohashi, Naofumi Toyama, JP 135 657
Takano, Satoshi Toyama, JP 152 1875
Takasaki, Tadashi Toyama, JP 45 55
Toyoda, Kazuyuki Toyama, JP 74 2074
Yahata, Takashi Toyama, JP 46 327

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