Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
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United States of America Patent
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Jul 27, 2021
Grant Date -
Oct 5, 2017
app pub date -
Feb 28, 2017
filing date -
Mar 29, 2016
priority date (Note) -
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Abstract
In a process chamber in which a substrate is processed, a gas supply unit is in the process chamber and configured to supply a process gas that processes the substrate. A plasma generation unit is in the process chamber and configured to activate the process gas, and a buffer part is configured to form a buffer chamber accommodating at least a part of the plasma generation unit and include a gas supply hole through which the activated process gas is supplied to the substrate. The buffer part includes a groove portion in which a part of the gas supply hole is cut out.
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