METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL

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United States of America Patent

SERIAL NO

15508937

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Abstract

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A production method according to an embodiment includes a formation step (S1), a first growth step (S2), a recovery step (S3), and a second growth step (S4). In the formation step (S1), a Si—C solution containing Si, Al and C is formed in a crucible. In the first growth step (S2), a seed shaft is moved down to bring a SiC seed crystal attached to the bottom edge of the seed shaft onto contact with the Si—C solution, and thereafter, an Al-doped p-type SiC single crystal is grown on the SiC seed crystal. After the first growth step (S2), the Al concentration in the Si—C solution is increased in the recovery step (S3). After the recovery step (S3), the Al-doped p-type SiC single crystal is further grown in the second growth step (S4).

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Patent Owner(s)

Patent OwnerAddress
NIPPON STEEL & SUMITOMO METAL CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KAIDO, Hiroshi Sodegaura-shi, Chiba, JP 4 2
KAMEI, Kazuhito Kitakyushu-shi, Fukuoka, JP 38 152
KISHIDA, Yutaka Chiba-shi, Chiba, JP 15 16
KUSUNOKI, Kazuhiko Nishinomiya-shi, Hyogo, JP 39 97
MORIGUCHI, Koji Nishinomiya-shi, Hyogo, JP 18 110
SEKI, Kazuaki Futtsu-shi, Chiba, JP 14 16

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