Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
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United States of America Patent
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Dec 4, 2018
Grant Date -
Oct 5, 2017
app pub date -
Oct 7, 2015
filing date -
Dec 26, 2014
priority date (Note) -
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Abstract
A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.
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