Systems and methods for sub-zero threshold characterization in a memory cell
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Jun 19, 2017
filing date -
Oct 28, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Systems and methods relating generally to data processing, and more particularly to systems and methods for characterizing a solid state memory. In one embodiment, the systems and methods may include programming a first cell of a solid state memory device to a first voltage, programming a second cell of the solid state memory device to a second voltage different than the first voltage, detecting a voltage shift in the first cell when the second cell is being programmed; characterizing the first voltage of the first cell offset by the voltage shift as an interim voltage of the first cell, and repeatedly reading the interim voltage of the first cell using a first set of incrementally adjusted voltage values until an output of the first cell changes.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully