ENGINEERED ETCHED INTERFACES FOR HIGH PERFORMANCE JUNCTIONS
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United States of America Patent
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app pub date -
Mar 31, 2016
filing date -
Mar 31, 2016
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Abandoned
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Abstract
Various methods for fabricating a semiconductor device by selective in-situ cleaning of a target surface of a semiconductor substrate by selective dry surface atomic layer etching of the target surface film, selectively removing one or more top layers of atoms from the target surface film of the semiconductor substrate. The selective in-situ cleaning of a target surface can be followed by deposition on the cleaned target surface such as to form a cap layer, a conductive contact layer, or a gate dielectric layer.
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