Self-aligned contact for trench power MOSFET

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United States of America Patent

PATENT NO 10644118
APP PUB NO 20170288028A1
SERIAL NO

15623303

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Abstract

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Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. Alternatively, the device has an oxide layer over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

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Patent Owner(s)

  • ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dun, Jowei San Jose, US 17 744
Huang, Terence Portland, US 5 24
Li, Wenjun Portland, US 161 956
Lin, Ching-Kai Hillsboro, US 6 26
Lui, Sik Sunnyvale, US 84 1690
Xue, Hongyong Portland, US 17 56
Yang, Yi Chang Portland, US 7 15

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