Enhanced substrate contact for MOS transistor in an SOI substrate, in particular an FDSOI substrate
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United States of America Patent
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Oct 9, 2018
Grant Date -
Oct 5, 2017
app pub date -
Aug 8, 2016
filing date -
Mar 30, 2016
priority date (Note) -
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Abstract
An integrated electronic device includes a semiconductive film above a buried insulating layer that is situated above a supporting substrate. An active zone is delimited within the semiconductive film. A MOS transistor supported within the active zone includes a gate region situated above the active zone. The gate region includes a rectilinear part situated between source and drain regions. The gate region further includes a forked part extending from the rectilinear part. A raised semiconductive region situated above the active zone is positioned at least partly between portions of the forked part. A substrate contact for the transistor is electrically coupled to the raised semiconductive region.
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