DOPANT COMPOSITIONS FOR ION IMPLANTATION
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United States of America Patent
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Apr 10, 2017
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Apr 11, 2016
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Abstract
The present invention relates to an improved composition for ion implantation. The composition comprises a dopant source and an assistant species wherein the assistant species in combination with the dopant gas produces a beam current of the desired dopant ion. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.
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