DEVICE AND METHOD FOR ANALYSING A DEFECT OF A PHOTOLITHOGRAPHIC MASK OR OF A WAFER
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United States of America Patent
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Apr 7, 2017
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Apr 8, 2016
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Abstract
The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.
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