Semiconductor structure having etching stop layer and manufacturing method of the same

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United States of America Patent

PATENT NO 10026692
APP PUB NO 20170294384A1
SERIAL NO

15096315

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Abstract

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A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a stack structure, an etching stop layer, and a conductive structure. The stack structure includes a plurality of conductive layers and a plurality of insulating layers stacked interlacedly. The etching stop layer is formed on a sidewall of the stack structure. An energy gap of the etching stop layer is larger than 6 eV. The conductive structure is electrically connected to at least one of the conductive layers.

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Patent Owner(s)

  • MACRONIX INTERNATIONAL CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Shih-Hung Hsinchu County, TW 172 4475

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