Resonance structure of bulk acoustic wave resonator

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United States of America Patent

PATENT NO 10097156
APP PUB NO 20170294893A1
SERIAL NO

15228298

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Abstract

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A resonance structure of bulk acoustic wave resonator comprises a bottom electrode, a dielectric layer and a top electrode, wherein the dielectric layer is formed on the bottom electrode; the top electrode is formed on the dielectric layer. A resonance area is defined by the overlapping area of the projection of the bottom electrode, the dielectric layer and the top electrode. The resonance area has a contour. The contour includes at least three curved edges and is formed by connecting the at least three curved edges. Each curved edge is concave to a geometric center of the contour.

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Patent Owner(s)

  • WIN SEMICONDUCTORS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chia-Ta Tao Yuan, TW 16 129
Chiang, Chih-Feng Tao Yuan, TW 9 18
Chin, Yung-Chung Tao Yuan, TW 5 26
Lin, Re Ching Tao Yuan, TW 7 32

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