METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL

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United States of America Patent

SERIAL NO

15517187

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Abstract

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The provided by the disclosure is a SiC single crystal production method permitting suppression of temperature variation of a Si—C solution even in a case of long-time crystal growth. The SiC single crystal production method includes: a preparation step of preparing a production apparatus including a crucible, a seed shaft, and an internal lid; a formation step of heating the material in the crucible to form the Si—C solution; a growth step of bringing the seed crystal into contact with the Si—C solution to produce the Si—C single crystal on the seed crystal; an internal lid adjustment step of vertically moving one of the internal lid and the crucible relative to the other during the growth step to keep an amount of variation in vertical distance between the internal lid and the Si—C solution within a first reference range.

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Patent Owner(s)

Patent OwnerAddress
TOYOTA JIDOSHA KABUSHIKI KAISHA1 TOYOTA-CHO TOYOTA-SHI AICHI-KEN 471-857
NIPPON STEEL & SUMITOMO METAL CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
DAIKOKU, Hironori Susono-shi, Shizuoka, JP 31 39
DOI, Masayoshi Nagoya-shi, Aichi, JP 10 2
KAIDO, Hiroshi Sodegaura-shi, Chiba, JP 4 2
KAMEI, Kazuhito Kitakyushu-shi, Fukuoka, JP 38 152
KISHIDA, Yutaka Chiba-shi, Chiba, JP 15 16
KUSUNOKI, Kazuhiko Nishinomiya-shi, Hyogo, JP 39 97
MORIGUCHI, Koji Nishinomiya-shi, Hyogo, JP 18 110
SEKI, Kazuaki Futtsu-shi, Chiba, JP 14 16

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