HIGH-VOLTAGE GAN HIGH ELECTRON MOBILITY TRANSISTORS WITH REDUCED LEAKAGE CURRENT
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Jul 29, 2016
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Apr 15, 2016
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Abstract
High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, a thin insulating layer formed beneath the gate, a gate-connected field plate, and a source-connected field plate.
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