APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCESS AND CRUCIBLE EMPLOYED THEREIN

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United States of America Patent

SERIAL NO

15517210

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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An object of the present invention is to provide a SIC single crystal production apparatus that stirs and heats a Si—C solution easily. The apparatus includes a crucible capable of containing a Si—C solution, a seed shaft, and an induction heater. The crucible includes a tubular portion and a bottom portion. The tubular portion includes an outer peripheral surface and an inner peripheral surface. The bottom portion is disposed at a lower end of the tubular portion. The bottom portion defines an inner bottom surface of the crucible. The outer peripheral surface includes a groove extending in a direction crossing the circumferential direction of the tubular portion.

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Patent Owner(s)

Patent OwnerAddress
TOYOTA JIDOSHA KABUSHIKI KAISHA1 TOYOTA-CHO TOYOTA-SHI AICHI-KEN 471-857
NIPPON STEEL & SUMITOMO METAL CORPORATIONTOKYO

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
DAIKOKU, Hironori Susono-shi, Shizuoka, JP 31 39
DOI, Masayoshi Nagoya-shi, Aichi, JP 10 2
KAMEI, Kazuhito Kitakyushu-shi, Fukuoka, JP 38 152
KISHIDA, Yutaka Chiba-shi, Chiba, JP 15 16
KUSUNOKI, Kazuhiko Nishinomiya-shi, Hyogo, JP 39 97

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