APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCESS AND CRUCIBLE EMPLOYED THEREIN
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United States of America Patent
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app pub date -
Oct 13, 2015
filing date -
Oct 17, 2014
priority date (Note) -
Abandoned
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Abstract
An object of the present invention is to provide a SIC single crystal production apparatus that stirs and heats a Si—C solution easily. The apparatus includes a crucible capable of containing a Si—C solution, a seed shaft, and an induction heater. The crucible includes a tubular portion and a bottom portion. The tubular portion includes an outer peripheral surface and an inner peripheral surface. The bottom portion is disposed at a lower end of the tubular portion. The bottom portion defines an inner bottom surface of the crucible. The outer peripheral surface includes a groove extending in a direction crossing the circumferential direction of the tubular portion.
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