Carbon Vacancy Defect Reduction Method for SiC
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United States of America Patent
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Oct 26, 2017
app pub date -
Apr 22, 2016
filing date -
Apr 22, 2016
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Abstract
A method of defect reduction for a SiC layer includes activating dopants disposed in the SiC layer, depositing a carbon-rich layer on the SiC layer after activating the dopants, tempering the carbon-rich layer so as to form graphite on the SiC layer, and diffusing carbon from the graphite into the SiC layer. Carbon diffused from the graphite fills carbon vacancies in the SiC layer.
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