Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device

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United States of America Patent

PATENT NO 11152214
APP PUB NO 20170309487A1
SERIAL NO

15133656

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Abstract

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A method of forming a semiconductor device that includes forming a metal oxide material on a III-V semiconductor channel region or a germanium containing channel region; and treating the metal oxide material with an oxidation process. The method may further include depositing of a hafnium containing oxide on the metal oxide material after the oxidation process, and forming a gate conductor atop the hafnium containing oxide. The source and drain regions are on present on opposing sides of the gate structure including the metal oxide material, the hafnium containing oxide and the gate conductor.

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Patent Owner(s)

  • IBM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ando, Takashi Tuckahoe, US 718 5576
Bruley, John Poughkeepsie, US 27 469
Cartier, Eduard A New York, US 89 1900
Frank, Martin M Dobbs Ferry, US 125 1460
Narayanan, Vijay New York, US 308 5568
Rozen, John Hastings on Hudson, US 56 267

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