Method for forming a semiconductor device and a semiconductor device

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United States of America Patent

PATENT NO 10020226
SERIAL NO

15645402

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Abstract

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In certain embodiments, a semiconductor device includes a plurality of semiconductor chips. Each semiconductor chip comprises a semiconductor body having a first side and a second side opposite the first side, a graphite substrate bonded to the second side of the semiconductor body and comprising an opening leaving an area of the second side of the semiconductor body uncovered by the graphite substrate, and a back-side metallization arranged in the opening of the graphite substrate and electrically contacting the area of the second side. The semiconductor device further includes a plurality of separation trenches each separating one of the plurality of semiconductor chips from an adjacent one of the plurality of semiconductor chips.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lehnert, Wolfgang Lintach, DE 48 260
Rupp, Roland Lauf, DE 189 1632
Santos, Rodriguez Francisco Javier Villach, AT 120 508
Schulze, Hans-Joachim Taufkirchen, DE 682 3896

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