Manufacturing method of memory device

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United States of America Patent

PATENT NO 9842855
SERIAL NO

15245380

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Abstract

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A method of manufacturing a memory device includes providing a semiconductor substrate including a first region and a second region. The method includes forming a lower structure including interconnect lines and an etch stop layer in the second region. The method includes forming a multilayer structure on the lower structure. The method also includes forming a slit trench in the multilayer structure of the first region, a first plug hole exposing the etch stop layer of the second region therethrough, and a second plug hole exposing a portion of the interconnect lines of the second region therethrough.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Nam Jae Cheongju-si, KR 172 596

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