Semiconductor device including interlayer support patterns on a substrate
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United States of America Patent
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Oct 30, 2018
Grant Date -
Oct 26, 2017
app pub date -
Jan 5, 2017
filing date -
Apr 20, 2016
priority date (Note) -
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Abstract
A semiconductor device and a method of forming the same are provided. The semiconductor device includes interlayer support patterns sequentially stacked on a substrate, horizontal conductive patterns sequentially stacked on the substrate, and an interlayer insulating layer disposed between the interlayer support patterns, extending between the horizontal conductive patterns, and disposed in parallel with a surface of the substrate. The interlayer insulating layer is in contact with the interlayer support patterns. A conductive structure extends in a direction perpendicular to the substrate. Vertical structures extending through the horizontal conductive patterns and the interlayer insulating layer are formed.
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