Tunable capacitor for FDSOI applications
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 5, 2019
Grant Date -
Oct 26, 2017
app pub date -
Jul 10, 2017
filing date -
Jun 25, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes an SOI substrate having a base substrate material, an active semiconductor layer positioned above the base substrate material and a buried insulating material layer positioned between the base substrate material and the active semiconductor layer. A gate structure is positioned above the active semiconductor layer and a back gate region is positioned in the base substrate material below the gate structure and below the buried insulating material layer. An isolation region electrically insulates the back gate region from the surrounding base substrate material, wherein the isolation region includes a plurality of implanted well regions that laterally contact and laterally enclose the back gate region and an implanted isolation layer that is formed below the back gate region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully