Semiconductor switching device separated by device isolation

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United States of America Patent

PATENT NO 10141358
APP PUB NO 20170309672A1
SERIAL NO

15645039

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Abstract

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A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Szu-Ying Toufen Township, TW 138 1853
Hsu, Tzu-Hsuan Kaohsiung, TW 186 1965
Hsu, Wei-Cheng Kaohsiung, TW 39 138
Kao, Min-Feng Chiayi, TW 140 730
Liu, Jen-Cheng Hsin-Chu, TW 392 3524
Tseng, Hsiao-Hui Tainan, TW 54 282
Yaung, Dun-Nian Taipei, TW 560 5970

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