Implementation of VMCO area switching cell to VBL architecture

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United States of America Patent

PATENT NO 10026782
SERIAL NO

15633054

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Systems and methods for improving performance of a non-volatile memory that utilizes a Vacancy Modulated Conductive Oxide (VMCO) structure are described. The VMCO structure may include a layer of amorphous silicon (e.g., a Si barrier layer) and a layer titanium oxide (e.g., a TiO2 switching layer). In some cases, the VMCO structure or VMCO stack may use bulk switching or switching O-ion movements across an area of the VMCO structure, as opposed to switching locally in a constriction of vacancy formed filamentary path. A VMCO structure may be partially or fully embedded within a word line layer of a memory array.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yangyin Heverlee, BE 23 437
Fu, Chu-Chen San Ramon, US 12 318
Petti, Christopher Mountain View, CA 37 1994
Tanaka, Yoichiro Yokkaichi, JP 73 1730

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