Semiconductor device including capacitor

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United States of America Patent

PATENT NO 10090377
APP PUB NO 20170309701A1
SERIAL NO

15424951

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Abstract

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A semiconductor device comprises a capacitor that includes a first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode. The dielectric layer comprises a first high-k dielectric layer between the first electrode and the second electrode, a first silicon oxide layer between the first high-k dielectric layer and the second electrode, and a first aluminum oxide layer between the first high-k dielectric layer and the second electrode.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Jaewan Seoul, KR 4 14
Choi, Jaehyoung Hwaseong-si, KR 15 614
Kim, Younsoo Yongin-si, KR 126 1138
Moon, Sunmin Yongin-si, KR 12 22

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