Importance

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Abstract

Trenches (8,9,10) are formed on a front surface side of an n-type semiconductor substrate (3) and penetrate a p-type base layer (4) and an n-type layer (5). A distance between the trench (8) and the trench (9) is smaller than a distance between the trench (9) and the trench (10). The n-type emitter layer (6) is formed in a cell region between the trench (8) and the trench (9). The p-type well region (11) is formed in a dummy region between the trench (9) and the trench (10). An outermost surface part of the n-type semiconductor substrate (3) is of only a p-type in the dummy region. The p-type well region (11) is deeper than the trenches (8,9,10).

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First Claim