Semiconductor Device Having Stripe-Shaped Gate Structures and Spicular or Needle-Shaped Field Electrode Structures
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United States of America Patent
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Jul 10, 2017
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Sep 17, 2014
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A semiconductor device includes a pair of stripe-shaped gate structures formed lengthwise in parallel in a first surface of a semiconductor body and extending into the semiconductor body, each stripe-shaped gate structure including a gate electrode and a gate dielectric separating the gate electrode from the semiconductor body. The semiconductor device further includes a plurality of field electrode structures formed in the semiconductor body between the pair of stripe-shaped gate structures, a body zone of a second conductivity type formed in the semiconductor body and extending between the pair of stripe-shaped gate structures, and a source zone of a first conductivity type opposite the second conductivity type formed in the body zone. Each field electrode structure includes a spicular or needle-shaped field electrode and a field dielectric adjacent the field electrode. Each spicular or needle-shaped field electrode has a diameter of at most 500 nm.
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