Semiconductor device and fabricating method thereof

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United States of America Patent

PATENT NO 9947766
SERIAL NO

15645164

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Abstract

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A semiconductor device includes a substrate, a source/drain region, an etch stop layer, an oxide layer, an interlayer dielectric layer, and a contact plug. The source/drain region is in the substrate. The etch stop layer is over the source/drain region. The oxide layer is over the etch stop layer. The interlayer dielectric layer is over the oxide layer. The contact plug is electrically connected to the source/drain region through the interlayer dielectric layer, the oxide layer, and the etch stop layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kuang-Hsin Taoyuan, TW 76 592
Chiang, Tsung-Yu New Taipei, TW 58 361

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