Power semiconductor drive circuit, power semiconductor circuit, and power module circuit device
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United States of America Patent
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Mar 5, 2019
Grant Date -
Oct 26, 2017
app pub date -
Jul 11, 2017
filing date -
Oct 10, 2014
priority date (Note) -
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Abstract
A power semiconductor drive circuit includes a parallel circuit connected to a gate of a power semiconductor element and constituted by two transistors for setting gate resistance of the power semiconductor element; a gate voltage monitoring circuit connected to the gate of the power semiconductor element and the parallel circuit, wherein a monitoring voltage is set in the gate voltage monitoring circuit to monitor a gate voltage of the power semiconductor element; a signal delay circuit to delay an output signal of the gate voltage monitoring circuit; and a gate control circuit to change the magnitude of combined resistance of the parallel circuit based on an output signal output from the signal delay circuit.
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