GAS DISTRIBUTING INJECTOR APPLIED IN MOCVD REACTOR

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United States of America Patent

APP PUB NO 20170314131A1
SERIAL NO

15467987

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Abstract

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The present invention relates to a gas distributing injector applied in MOCVD reactor. The gas distributing injector comprises at least one gas distributing layer for distributing different gases. The distributing layer is a single-layered structure. The distributing layer comprises a disk-shaped body, a plurality of first gas channels, a plurality of second gas channels, and a plurality of third gas channels. The first gas channels, the second gas channels, and the third gas channels are radially distributed on the same plane in the disk-shaped body. Different gases are distributed or fed into different gas channels (such as the first gas channels, the second gas channels, and the third gas channels) and transported by different gas channels. Through different gas channels, different gases are transversely injected into the MOCVD reactor on the same plane respectively. Therefore, the gas distributing injector of this invention can distribute different gases by a single-layered structure.

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Patent Owner(s)

Patent OwnerAddress
HERMES-EPITEK CORPORATION14F NO 38 SEC 2 DUN-HUA S ROAD DA-AN DISTRICT TAIPEI 10683

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Che-Lin Hsinchu, TW 5 0
Chung, Bu-Chin Hsinchu, TW 13 151
Lin, Po-Jung Hsinchu, TW 30 341
Tsai, Chang-Da Kaohsiung City, TW 17 146

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