Method for depositing a planarization layer using polymerization chemical vapor deposition

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United States of America Patent

PATENT NO 10115586
APP PUB NO 20170323784A1
SERIAL NO

15587570

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Abstract

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A method is provided for depositing a planarization layer over features on a substrate using sequential polymerization chemical vapor deposition. According to one embodiment, the method includes providing a substrate containing a plurality of features with gaps between the plurality of features, delivering precursor molecules by gas phase exposure to the substrate, adsorbing the precursor molecules on the substrate to at least substantially fill the gaps with a layer of the adsorbed precursor molecules, and reacting the precursor molecules to form a polymer layer that at least substantially fills the gaps.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Altemus, Bruce A Esperance, US 1 261
Faguet, Jacques Austin, US 51 3340
Ichiki, Kazuya Guilderland, US 2 261

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