METHOD TO DEPOSIT CONFORMAL AND LOW WET ETCH RATE ENCAPSULATION LAYER USING PECVD
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United States of America Patent
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Sep 28, 2016
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May 6, 2016
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Abstract
Methods of depositing conformal, dense silicon-containing films having low hydrogen content are provided herein. Methods involve pulsing a plasma while exposing a substrate to a silicon-containing precursor and reactant to facilitate a primarily radical-based pulsed plasma enhanced chemical vapor deposition process for depositing a conformal silicon-containing film. Methods also involve periodically performing a post-treatment operation whereby, for every about 20 Å to about 50 Å of film deposited using pulsed plasma PECVD, the deposited film is exposed to an inert plasma to densify and reduce hydrogen content in the deposited film.
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