MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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United States of America Patent
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Nov 9, 2017
app pub date -
Jul 27, 2017
filing date -
Apr 28, 2015
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Abstract
A semiconductor device includes a substrate having a memory array region and a peripheral region, isolation layers formed in the peripheral region to define an active region, offset insulating layers separated from each other and formed in the active region, and a gate electrode having edges overlapping with the offset insulating layers and arranged in the active region between the offset insulating layers.
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