Vertical transistor with a body contact for back-biasing
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United States of America Patent
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Oct 9, 2018
Grant Date -
Nov 9, 2017
app pub date -
Apr 10, 2017
filing date -
May 9, 2016
priority date (Note) -
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Abstract
A method of forming a substrate contact in a vertical transistor device includes patterning a sacrificial layer to form an opening in the sacrificial layer, the sacrificial layer disposed on hardmask arranged on a substrate, and the substrate including a bulk semiconductor layer, a buried oxide layer arranged on the bulk semiconductor layer, and a semiconductor layer arranged on the buried oxide layer; forming oxide spacers on sidewalls of the opening in the sacrificial layer; using the oxide spacers as a pattern to etch a trench through the substrate, the trench stopping at a region within the bulk semiconductor layer; and depositing a conductive material in the trench to form the substrate contact.
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